The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2009

Filed:

Apr. 10, 2006
Applicants:

Jan Van Olmen, Boutersem, BE;

Marleen Van Hove, Blanden, BE;

Herbert Struyf, Kontich, BE;

Dirk Hendrickx, Sint-Agatha Rode, BE;

Serge Vanhaelemeersch, Leuven, BE;

Werner Boullart, Binkom, BE;

Inventors:

Jan Van Olmen, Boutersem, BE;

Marleen Van Hove, Blanden, BE;

Herbert Struyf, Kontich, BE;

Dirk Hendrickx, Sint-Agatha Rode, BE;

Serge Vanhaelemeersch, Leuven, BE;

Werner Boullart, Binkom, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for patterning a dual damascene structure in a semiconductor substrate is disclosed. The patterning is a metal hardmask based pattering eliminating at least resist poisoning and further avoiding or at least minimizing low-k damage. The method can be used as a full-via-first patterning method or a partial-via-first patterning method.


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