Herbert Struyf

Title: Herbert Struyf: Innovator in Semiconductor Technology

Introduction

Herbert Struyf is a notable inventor based in Kontich, Belgium, recognized for his contributions to semiconductor technology. With a total of 4 patents, he has made significant advancements in methods for patterning high aspect ratio vias and dual damascene structures.

Latest Patents

One of his latest patents is titled "High aspect ratio via etch." This patent provides a method for patterning deep vias or vias with high aspect ratios, effectively eliminating the hard mask undercut. The method enables the creation of deep vias in a substrate for use in three-dimensional stacked semiconductor devices, achieving smooth via sidewalls and sufficient slope for metallization. Another significant patent is the "Dual damascene patterning method," which discloses a technique for patterning a dual damascene structure in a semiconductor substrate. This method utilizes a metal hardmask to eliminate resist poisoning and minimize low-k damage, applicable in both full-via-first and partial-via-first patterning methods.

Career Highlights

Herbert Struyf has worked with prominent organizations, including Imec, where he has contributed to cutting-edge research and development in semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Throughout his career, Herbert has collaborated with esteemed colleagues such as Serge Vanhaelemeersch and Werner Boullart, further enhancing the innovation landscape in his field.

Conclusion

Herbert Struyf's innovative work in semiconductor technology, particularly in high aspect ratio vias and dual damascene structures, showcases his significant impact on the industry. His contributions continue to influence advancements in semiconductor manufacturing processes.