Imec

Other

Katholieke Universiteit Leuven, Ku Leuven R&d

Werner Boullart

Serge Vanhaelemeersch

Herbert Struyf

Nadine Collaert

Paul A Zimmerman

Marleen Van Hove

Marc Demand

Jan Van Olmen

Dirk Hendrickx

Kristel Van Baekel

Christian Jehoul

Adelina K Shickova

A new, effective and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET), resulting in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) is provided. The new method uses an SFbased metal gate etch chemistry for the introduction of Fluorine, which after a thermal budget within the standard process flow, results in excellent F passivation of the interfaces. A key advantage of the method is that it uses the metal gate etch for F introduction, requiring no extra implantations or treatments. In addition to the significant BTI improvement with the novel method, a better Vcontrol and increased drive current on MuGFET devices is achieved.

Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies

A method for patterning a dual damascene structure in a semiconductor substrate is disclosed. The patterning is a metal hardmask based pattering eliminating at least resist poisoning and further avoiding or at least minimizing low-k damage. The method can be used as a full-via-first patterning method or a partial-via-first patterning method.

Dual damascene patterning method

The present invention concerns a method for stripping the photoresist layer and the crust from a semiconductor. The crust has been formed with as a result of an ion implantation step, wherein the method comprises an ion assisted plasma step using a mixture of water vapour, helium and a F-containing compound in which radicals are generated, and the step of contacting said photoresist layer and crust with said radicals to remove said photoresist layer and crust from said semiconductor surface. Said plasma step is preferably an ion assisted plasma step.

Method for stripping ion implanted photoresist layer

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Binkom, Belgium

Werner Boullart