The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Jan. 09, 2008
Nadine Collaert, Blanden, BE;
Paul Zimmerman, Cedar Creek, TX (US);
Marc Demand, Saint-Jean-Geest, BE;
Werner Boullart, Binkom, BE;
Adelina K. Shickova, Leuven, BE;
Nadine Collaert, Blanden, BE;
Paul Zimmerman, Cedar Creek, TX (US);
Marc Demand, Saint-Jean-Geest, BE;
Werner Boullart, Binkom, BE;
Adelina K. Shickova, Leuven, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, K.U. Leuven R&D, Leuven, BE;
Abstract
A new, effective and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET), resulting in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) is provided. The new method uses an SFbased metal gate etch chemistry for the introduction of Fluorine, which after a thermal budget within the standard process flow, results in excellent F passivation of the interfaces. A key advantage of the method is that it uses the metal gate etch for F introduction, requiring no extra implantations or treatments. In addition to the significant BTI improvement with the novel method, a better Vcontrol and increased drive current on MuGFET devices is achieved.