Adelina K Shickova

Title: The Innovations of Adelina K Shickova

Introduction

Adelina K Shickova is a prominent inventor based in Leuven, Belgium. She has made significant contributions to the field of semiconductor technology, particularly in the development of methods that enhance the performance of transistor technologies. Her innovative approach has led to advancements that are both effective and cost-efficient.

Latest Patents

Adelina holds a patent titled "Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies." This patent introduces a new method for incorporating Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices, known as MuGFET. The method results in substantial improvements in Negative and Positive Bias Temperature Instabilities (NBTI and PBTI). By utilizing an SF-based metal gate etch chemistry for Fluorine introduction, her approach eliminates the need for additional implantations or treatments. This innovation not only enhances BTI performance but also improves Vcontrol and increases drive current in MuGFET devices.

Career Highlights

Throughout her career, Adelina has worked with esteemed organizations such as Imec and Katholieke Universiteit Leuven, also known as KU Leuven R&D. Her experience in these institutions has allowed her to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Adelina has collaborated with notable colleagues, including Nadine Collaert and Paul A Zimmerman. These partnerships have fostered an environment of innovation and have led to significant advancements in semiconductor technologies.

Conclusion

Adelina K Shickova's contributions to the field of semiconductor technology exemplify her dedication to innovation and excellence. Her patent and career achievements highlight her role as a leading inventor in the industry.