Company Filing History:
Years Active: 2024-2025
Title: Wenshan Xu: Innovator in Semiconductor Technology
Introduction
Wenshan Xu is a prominent inventor based in Wuhan, China, known for his significant contributions to semiconductor technology. With a total of three patents to his name, Xu has made remarkable advancements in the field, particularly in the design and functionality of semiconductor devices.
Latest Patents
One of Xu's latest patents is titled "Semiconductor device and method for forming the same." This invention describes a semiconductor device that includes a semiconductor substrate, a doped region formed within the substrate, and a source/drain created in the doped region. The device also features a conductive pad on the source/drain, a gate dielectric layer, and a gate formed on the dielectric layer, among other components.
Another notable patent is "Memory peripheral circuit having three-dimensional transistors and method for forming the same." This invention outlines a memory device that consists of an array of memory cells and multiple peripheral circuits designed to control these cells. A key feature of this patent is the inclusion of a first three-dimensional (3D) transistor that interacts with the memory cells, showcasing Xu's innovative approach to enhancing memory technology.
Career Highlights
Wenshan Xu is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work has not only contributed to the advancement of technology but has also positioned his company as a leader in the semiconductor industry.
Collaborations
Throughout his career, Xu has collaborated with talented individuals such as Liang Chen and Chao Sun. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Wenshan Xu's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence the future of memory devices and semiconductor applications.