The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Nov. 24, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Liang Chen, Wuhan, CN;
Wenshan Xu, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 20/00 (2023.01); H01L 21/265 (2006.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10B 20/60 (2023.02); H01L 21/26513 (2013.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
Abstract
A semiconductor device includes a semiconductor substrate, a doped region formed in the semiconductor substrate, a source/drain formed in the doped region, a conductive pad formed on the source/drain, a gate dielectric layer disposed over the semiconductor substrate and the doped region exposing the conductive pad, a gate formed on the gate dielectric layer, an insulation layer formed over the gate, the gate dielectric layer, and the conductive pad, and a contact formed in the insulation layer in electric contact with the conductive pad.