The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Sep. 22, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Liang Chen, Wuhan, CN;
Chao Sun, Wuhan, CN;
Wei Liu, Wuhan, CN;
Wenshan Xu, Wuhan, CN;
Wu Tian, Wuhan, CN;
Ning Jiang, Wuhan, CN;
Lei Xue, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In certain aspects, a memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor coupled to the array of memory cells through at least one of the plurality of word lines. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode.