Ning Jiang

Title: Ning Jiang: Innovator in Memory Device Technology

Introduction

Ning Jiang is a prominent inventor based in Wuhan, China, known for his significant contributions to the field of memory device technology. With a total of five patents to his name, he has made remarkable advancements in the design and functionality of memory devices.

Latest Patents

One of Ning Jiang's latest patents is titled "Memory devices having vertical transistors and methods for forming the same." This invention describes a three-dimensional (3D) memory device that includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the two. The first semiconductor structure contains a peripheral circuit, while the second structure features an array of memory cells and bit lines that extend in a direction perpendicular to the first. Each memory cell incorporates a vertical transistor and a storage unit, with adjacent vertical transistors being mirror-symmetric. The array of memory cells connects to the peripheral circuit through the bonding interface.

Another notable patent is "Memory peripheral circuit having three-dimensional transistors and method for forming the same." This invention outlines a memory device that consists of an array of memory cells, word lines, and peripheral circuits designed to control the memory cells. A key feature of this patent is a first peripheral circuit that includes a three-dimensional (3D) transistor, which is coupled to the memory cells via bit lines. The 3D transistor comprises a semiconductor body and a gate structure that contacts multiple sides of the body.

Career Highlights

Ning Jiang is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, particularly through the integration of three-dimensional structures.

Collaborations

Throughout his career, Ning Jiang has collaborated with notable colleagues, including Wei Liu and Hongbin Zhu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Ning Jiang's contributions to memory device technology exemplify the impact of innovative thinking in the field of electronics. His patents reflect a commitment to advancing technology and improving the functionality of memory devices.