The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jul. 28, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Wenshan Xu, Wuhan, CN;
Xin Wang, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02);
Abstract
A three-dimensional 3D memory device includes a substrate, a peripheral device disposed on the substrate, a memory stack disposed above the peripheral device and including a plurality of conductor/dielectric layer pairs, and a plurality of memory strings, each of the memory strings extending through the memory stack. The peripheral device includes at least a transistor disposed on the substrate. The transistor includes a gate stack. The gate stack of the transistor includes a staircase structure, and an operational voltage of the transistor is above 5 volts.