Weng-Hsing Huang

Title: Weng-Hsing Huang: Innovator in Memory Device Technology

Introduction

Weng-Hsing Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of five patents. His work focuses on innovative methods for fabricating memory devices that enhance performance and efficiency.

Latest Patents

Huang's latest patents include a memory device and a method for fabricating the same. This invention describes a memory device that consists of a substrate, buried bit lines, word line structures, a dielectric layer, conductive lines in trenches, and self-aligned contacts. The buried bit lines are strategically located within the substrate, while the word line structures cross over them. Each word line structure is composed of a word line, a gate oxide layer, a capping layer, and a spacer. The conductive lines are positioned in the dielectric layer above the buried bit lines, crossing over the capping layers. The dielectric layer is interposed between the word line structures and the conductive lines, with self-aligned contacts placed beneath the conductive lines to establish electrical connections.

Another notable patent is a memory device structure featuring composite buried and raised bit lines. This invention includes a substrate with a gate oxide layer, a gate structure, buried bit lines on either side of the gate structures, and a raised line positioned on the buried bit line. An isolating spacer is placed on the sidewalls of the gate structure, and a word line is oriented perpendicularly over the substrate. An insulation layer is also included to electrically isolate the raised line from the word line.

Career Highlights

Weng-Hsing Huang is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His expertise and dedication have positioned him as a key figure in the development of advanced memory devices.

Collaborations

Huang has collaborated with notable coworkers, including Kent Kuohua Chang and Chen-Chin Liu. Their combined efforts contribute to the advancement of memory device technology.

Conclusion

Weng-Hsing Huang's contributions to memory device technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in memory technology, showcasing his role as a leading inventor.