The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Jul. 15, 2003
Weng-Hsing Huang, Hsinchu, TW;
Kent Kuohua Chang, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device and a method for fabricating the same are described. The memory device includes a substrate, buried bit lines, word line structures, a dielectric layer, conductive lines in trenches and self-aligned contacts. The buried bit lines are located in the substrate, and the word line structures are disposed on the substrate crossing over the buried bit lines. Each word line structure consists of a word line, a gate oxide layer, a capping layer and a spacer. Each conductive line is disposed in the dielectric layer and over a buried bit line, and crosses over the capping layers. The dielectric layer is disposed between the word line structures and between the conductive lines. Each self-aligned contact is disposed under a conductive line and between two adjacent word lines to electrically connect the conductive line and the corresponding buried bit line.