Hsinchu, Taiwan

Wei-Chang Lin


Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 2001-2023

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4 patents (USPTO):Explore Patents

Title: Wei-Chang Lin: Innovator in Memory Device Technology

Introduction

Wei-Chang Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 4 patents. His innovative approaches have paved the way for advancements in semiconductor manufacturing.

Latest Patents

Wei-Chang Lin's latest patents focus on methods of forming memory devices. One of his notable inventions includes a memory device that comprises a substrate, a plurality of word-line structures, cap structures, and air gaps. The word-line structures are strategically placed on the substrate, while the cap structures are positioned on top of these word-line structures. The material used for the cap structures is a nitride, which features a nitrogen concentration that decreases as it moves away from the corresponding word-line structure. The air gaps are located between the word-line structures and are in direct contact with them. This innovative design enhances the performance and efficiency of memory devices.

Career Highlights

Throughout his career, Wei-Chang Lin has worked with leading companies in the semiconductor industry. He has been associated with Powerchip Semiconductor Manufacturing Corporation and United Microelectronics Corporation. His experience in these organizations has contributed to his expertise in memory device technology.

Collaborations

Wei-Chang Lin has collaborated with notable colleagues, including Wen Chung Yang and Shih Hsi Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Wei-Chang Lin's contributions to memory device technology and his innovative patents highlight his role as a key figure in the semiconductor industry. His work continues to influence advancements in this critical field.

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