The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Aug. 19, 1998
Wei-Chang Lin, Hsinchu, TW;
Yuan-Chi Pai, Nantou, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A planarized layer is formed on the substrate, and an opening is formed. A microlens resist layer is formed over the planarized layer, wherein the microlens resist layer has a bigger thickness in the opening than on the planarized layer. A first photoresist layer is formed on the microlens layer. The first photoresist layer has a pattern align to the color filter. A first exposure step is performed at least onto the microlens layer to form a first exposed portion, using the first photoresist layer as a mask, and the first photoresist layer is removed. A second photoresist layer is performed on the microlens resist layer. The second photoresist layer has a pattern align to the opening. A second exposure step is performed at least onto the microlens layer to form a second exposed portion, using the second photoresist layer as a mask, and the second photoresist layer is removed. A positive development step is performed to remove the first exposed portion and the second exposed portion of the microlens resist layer and to form a plurality of microlens blocks align to the color filter. An after-development-exposure step and a curing step are performed so that each of the microlens blocks forms a microlens. The microlens has a substantially rounded semi-circle structure.