The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Sep. 13, 2020
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Wen Chung Yang, Miaoli County, TW;

Shih Hsi Chen, Hsinchu County, TW;

Wei-Chang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/764 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/0223 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/31111 (2013.01); H01L 21/764 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract

Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.


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