This inventor holds 7 USPTO granted patents. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Socionext Inc.. Active years: 2007-2016.
Location History:
- Hirakata, JP (2007 - 2008)
- Osaka, JP (2008 - 2016)
Company Filing History:



Years Active: 2007-2016
Title: Wataru Abe: Innovator in Semiconductor Technology
Introduction
Wataru Abe is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the efficiency and functionality of semiconductor memory devices.
Latest Patents
One of Wataru Abe's latest patents is a semiconductor memory device featuring a selection transistor that has the same shape and size as a memory cell transistor. This innovation allows for a circuit on an end column of a divided memory array to be formed by a block selection transistor, which matches the memory cell's dimensions. This design promotes pattern uniformity and eliminates the need for dummy patterns in memory arrays. Another notable patent involves a semiconductor memory device where subarrays within a memory cell array include a bit line driving transistor. This transistor's drain connects to a bit line, while its source connects to an interconnection with a power supply potential. The configuration allows for efficient data storage and retrieval.
Career Highlights
Wataru Abe has worked with notable companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Wataru has collaborated with esteemed colleagues, including Shuji Nakaya and Mitsuaki Hayashi. Their combined efforts have further advanced the field of semiconductor memory devices.
Conclusion
Wataru Abe's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence advancements in memory devices, showcasing the importance of innovation in technology.