Semiconductor memory device having bit line precharge circuit controlled by address decoded signals

Abstract

A semiconductor memory device includes a memory cell array, a charge circuit which compensates for OFF leakage current developed at selected bit lines, a reset circuit having a ground potential corresponding to a potential at non-selected bit lines, a read circuit constituted by a plurality of transistors whose gates are connected to the bit lines, and a bit line precharge circuit which charges the selected bit lines for a fixed time period. As a result of adopting such a configuration, there is no need to provide a transmission gate, such as a column decoder, to a charging path between the read circuit and the bit lines, so that a low-power supply voltage operation can be effected without the influence of a substrate bias effect.