Portland, OR, United States of America

Wanqing Cao


Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 294(Granted Patents)


Company Filing History:


Years Active: 2001-2008

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7 patents (USPTO):Explore Patents

Title: Innovations of Wanqing Cao

Introduction

Wanqing Cao is a prominent inventor based in Portland, Oregon, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, he has made remarkable advancements in the field of memory cell design and thin film resistor structures.

Latest Patents

Cao's latest patents include a thin film resistor structure that is formed over a semiconductor substrate. This invention involves a gate structure and a dielectric layer, with a via etched to expose a conductive layer of the gate structure. A layer of titanium nitride is deposited, followed by a rapid thermal anneal in an oxygen ambient, resulting in a titanium oxynitride film. Additionally, he has developed a memory cell with a reduced soft error rate, which includes SRAM memory cells designed to minimize data loss while maintaining a compact size. This innovative design incorporates resistors that do not occupy valuable surface area on the semiconductor substrate.

Career Highlights

Wanqing Cao is currently employed at Integrated Device Technology, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and reliability of memory cells, making significant impacts in the industry.

Collaborations

Cao has collaborated with notable colleagues, including Shih-Ked Lee and Guo-Qiang Lo, contributing to various projects that advance semiconductor innovations.

Conclusion

Wanqing Cao's contributions to the field of semiconductor technology through his patents and innovative designs have established him as a key figure in the industry. His work continues to influence the development of more efficient and reliable memory systems.

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