The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Jan. 26, 2001
Integrated Device Technology, Inc., Santa Clara, CA (US);
Abstract
A semiconductor structure is provided that includes a gate, a dielectric spacer located adjacent to a sidewall of the gate, a source/drain region, and a continuous silicide strap located over the gate, the dielectric spacer and the source/drain region. The silicide strap provides an electrical connection between the gate and the source drain region. In one embodiment, the silicide strap is formed by a method that includes the steps of (1) implanting a semiconductor material, such as silicon, into upper surfaces of the gate, the dielectric spacer, and the source/drain region, (2) depositing a refractory metal over the implanted semiconductor material, and (3) reacting the refractory metal with the implanted semiconductor material, thereby forming the continuous silicide strap at the upper surfaces of the gate, the dielectric spacer and the source/drain region. Advantageously, the dielectric spacer does not need to be removed prior to forming the silicide strap.