The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Mar. 22, 2004
Gaolong Jin, Hillsboro, OR (US);
Wanqing Cao, Portland, OR (US);
Guo-qiang Lo, Portland, OR (US);
Shih-ked Lee, Fremont, CA (US);
Gaolong Jin, Hillsboro, OR (US);
Wanqing Cao, Portland, OR (US);
Guo-Qiang Lo, Portland, OR (US);
Shih-Ked Lee, Fremont, CA (US);
Integrated Device Technology, Inc., San Jose, CA (US);
Abstract
The present invention relates to a method for forming a thin film resistor and a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a portion of the gate structure. A layer of titanium nitride is deposited using a chemical vapor deposition process. A rapid thermal anneal is performed in an oxygen ambient. The rapid thermal anneal incorporates oxygen into the titanium nitride, forming titanium oxynitride film. A layer of dielectric material is then deposited and etched-back to form a dielectric plug that fills the remaining portion of the via. The titanium oxynitride film is patterned to form a titanium oxynitride structure that is electrically coupled to the gate structure. A metal layer is deposited and patterned to form an interconnect structure that electrically couples the titanium oxynitride structure to other circuitry.