logo

For the Inventor, By the Inventor

East Brunswick, NJ, United States of America

Walter F Reichert

This inventor holds 7 USPTO granted patents. Top assignee: Rca Inc.. Active years: 1976-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Walter F Reichert. Retrieved from https://idiyas.com/inventor/walter-f-reichert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 6

Forward Citations = 216(Granted Patents)


Location History:

  • E. Brunswick, NJ (US) (1982)
  • East Brunswick, NJ (US) (1976 - 1987)

Company Filing History:

goldMedal7 out of 5,349 
 
Rca Inc.
 patents

Years Active: 1976-1987

Loading Chart...
7 patents (USPTO):Explore Patents
1. 4651179 - Low resistance gallium arsenide field effect transistor (1987-03-17),
2. 4545109 - Method of making a gallium arsenide field effect transistor (1985-10-08),
3. 4374392 - Monolithic integrated circuit interconnection and fabrication method (1983-02-15),
4. 4324814 - Method for forming a narrow thin film line (1982-04-13),
5. 4266333 - Method of making a Schottky barrier field effect transistor (1981-05-12),
6. 4202001 - Semiconductor device having grid for plating contacts (1980-05-06),
7. 3993515 - Method of forming raised electrical contacts on a semiconductor device (1976-11-23),

Title: Walter F. Reichert: Innovator in Gallium Arsenide Technology

Introduction

Walter F. Reichert is a prominent inventor based in East Brunswick, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide field effect transistors. With a total of 7 patents to his name, Reichert's work has had a lasting impact on high-frequency electronic devices.

Latest Patents

Reichert's latest patents include innovative methods for producing high-frequency III-V field effect transistors (FETs). One notable patent describes a method of producing a low resistance gallium arsenide FET. This method involves forming a doped layer on a wafer of undoped, semi-insulating III-V material. The structure is then etched to create a mesa, after which a channel region is regrown from an exposed portion of the III-V substrate. The formation of the channel region defines the source and drain regions. Ohmic contacts are made to these regions, followed by the creation of a Schottky contact to the channel region. Another patent outlines a similar method for making gallium arsenide FETs, emphasizing the innovative techniques that Reichert has developed.

Career Highlights

Walter F. Reichert has had a distinguished career, working at RCA Inc., where he has been able to apply his expertise in semiconductor technology. His work has contributed to advancements in high-frequency electronics, making him a key figure in the industry.

Collaborations

Reichert has collaborated with notable professionals in his field, including his coworker Ho-Chung Huang. These collaborations have further enhanced the development of innovative technologies in semiconductor applications.

Conclusion

Walter F. Reichert's contributions to gallium arsenide technology and his innovative patents have established him as a leading inventor in the field. His work continues to influence the development of high-frequency electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…