Rca Inc.

Walter F Reichert

Ho-Chung Huang

A method of producing a high frequency III-V FET and the resultant structure is described wherein a doped layer is formed on a wafer of undoped, semi-insulating III-V material. The structure is then etched to form a mesa after which, a channel region is regrown from an exposed portion of the III-V substrate. The formation of the channel region defines the source and drain regions. Ohmic contacts are then made to the source and drain regions after which a Schottky contact is made to the channel region.

Low resistance gallium arsenide field effect transistor

Method of making a gallium arsenide field effect transistor

A monolithic integrated circuit incorporates a substrate of III-V material having an interconnection pattern disposed on a surface thereof. An epitaxial layer is grown on the substrate surface such that it overgrows the interconnection pattern, and a plurality of circuit elements, formed on the surface of the epitaxial layer, are interconnected by contacts which extend from the epitaxial layer surface to the underlying interconnection pattern.

Monolithic integrated circuit interconnection and fabrication method

A monocrystalline semiconductor substrate is provided, and a thin film pattern is defined on a surface thereof. An epitaxial layer is then grown on the substrate surface such that it overgrows the thin film pattern a predetermined distance. That portion of the thin film not covered by the epitaxial layer is then removed.

Method for forming a narrow thin film line

A Schottky barrier field effect transistor is made by coating the surface of a body of semiconductor material with a metal layer having good ohmic contact with the semiconductor material and defining the metal layer to form spaced source and drain contacts. A relatively thick layer of an insulating material such as silicon oxide or silicon nitride, is coated over the source and drain contacts and the exposed portions of the surface of the semiconductor material between the source and drain contacts. Using a photoresist mask, an opening is etched through the insulating layer to the surface of the semiconductor material over the space between the source and drain contacts with the opening being etched back slightly from the edges of the photoresist mask. Using the photoresist mask as a deposition mask, a metal film is deposited through the opening in the insulating layer onto the exposed surface of the semiconductor material to form the gate. After removing the photomask, a metal contact is plated on the gate to substantially fill the opening in the insulating layer.

Method of making a Schottky barrier field effect transistor

A semiconductor device includes a body of semiconductor material on which are formed a plurality of spaced semiconductor elements. Each of the semiconductor elements includes a plurality of contacts, some of which are separated from each other by recesses in the semiconductor body. A metal grid is on the semiconductor body and surrounds each of the semiconductor elements. At least one of the contacts of each element extends to and is connected to the grid. The grid serves to electrically connect the contacts of all the semiconductor elements to permit the electrical plating of the contacts. Those contacts of each semiconductor element which are not directly connected to the grid are electrically connected thereto through the semiconductor body and an adjacent contact which is directly connected to the grid.

Semiconductor device having grid for plating contacts

Raised electrical contacts are electroplated on selected previously metallized contacts of a semiconductor device. Each metallized contact is on a surface of a separate mesa, respectively, of the device and extends in a cantilever manner beyond the surface of the mesa. The electroplating of the raised electrical contacts is accomplished by the steps of (1) depositing a layer of a metal over the device, (2) applying a photoresist over the layer of the metal, (3) defining openings in the photoresist over areas of the metallized contacts where the raised contacts are to be formed, and (4) electroplating the raised contacts on the metallized contacts through the openings, using the layer of the metal as an electrode in an electroplating system.

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East Brunswick, NJ, United States of America

Walter F Reichert