Espoo, Finland

Ville Miikkulainen

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Ville Miikkulainen: Innovator in Atomic Layer Deposition Technology

Introduction

Ville Miikkulainen is a notable inventor based in Espoo, Finland. He has made significant contributions to the field of atomic layer deposition technology. With a total of 2 patents, his work focuses on enhancing the efficiency and effectiveness of deposition processes.

Latest Patents

Miikkulainen's latest patents include a precursor source arrangement and an atomic layer deposition apparatus. The precursor source arrangement is designed for an atomic layer deposition reactor, featuring a valve chamber with multiple supply valves and a precursor source chamber that includes a heat transfer element. This innovative design aims to improve the heating of precursor containers and valves, ensuring optimal performance in deposition processes. The atomic layer deposition apparatus consists of a vacuum chamber and a deposition chamber, equipped with inlet and discharge channels for gas supply and removal. This apparatus is engineered to facilitate precise control over the deposition environment, enhancing the overall efficiency of the process.

Career Highlights

Throughout his career, Ville Miikkulainen has worked with prominent companies such as Beneq Oy and Beneq Group Oy. His experience in these organizations has allowed him to develop and refine his expertise in atomic layer deposition technology.

Collaborations

Miikkulainen has collaborated with talented individuals in his field, including Pekka T. Soininen and Hulda Aminoff. These partnerships have contributed to the advancement of his innovative projects and patents.

Conclusion

Ville Miikkulainen stands out as a key figure in the realm of atomic layer deposition technology. His patents and career achievements reflect his dedication to innovation and excellence in this specialized field.

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