Beneq Oy

Beneq Group Oy

Ville Miikkulainen

Pekka T Soininen

Hulda Aminoff

A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.

Precursor source arrangement and atomic layer deposition apparatus

An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.

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Espoo, Finland

Ville Miikkulainen