Ung-Hwan Pi

Title: Ung-Hwan Pi: Innovator in Magnetic Memory Technology

Introduction

Ung-Hwan Pi is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of magnetic memory technology, holding a total of 4 patents. His work primarily focuses on developing advanced memory devices that enhance data storage capabilities.

Latest Patents

Among his latest patents is a magnetoresistive random access memory (MRAM) device and method of manufacturing the same. This MRAM device features a first conductive pattern that generates a spin orbital torque, a torque transfer pattern in contact with the first conductive pattern, an insulation pattern covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure that includes a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern. Another notable patent is for a magnetic memory device that consists of a first magnetization layer, a tunnel barrier on the first magnetization layer, a second magnetization layer on the tunnel barrier, and a spin current assisting layer on the sidewall of the second magnetization layer.

Career Highlights

Ung-Hwan Pi is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of magnetic memory devices, which are crucial for modern computing applications.

Collaborations

He has collaborated with notable colleagues, including Kwang-seok Kim and Kee-won Kim, contributing to various projects that push the boundaries of technology.

Conclusion

Ung-Hwan Pi's contributions to magnetic memory technology exemplify his dedication to innovation and excellence in the field. His patents reflect a commitment to advancing data storage solutions, making a significant impact on the industry.