Samsung Electronics Co., Ltd.

Ung-Hwan Pi

Young-Jin Cho

Sung-chul Lee

Young-Soo Park

Kee-won Kim

Kwang-seok Kim

Sun-Ae Seo

Young-Man Jang

Hee-Ju Shin

Kwang-Seok Kim

Kee-Won Kim

Ji-Young Bae

An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.

Magnetoresistive random access memory device and method of manufacturing the same

Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Magnetic memory device

Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

Magnetic memory devices

Growing community of inventors

Hwaseong-si, South Korea

Ung-Hwan Pi