The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

May. 19, 2015
Applicants:

Sung-chul Lee, Osan-si, KR;

Kwang-seok Kim, Seoul, KR;

Kee-won Kim, Suwon-si, KR;

Young-man Jang, Hwaseong-si, KR;

Ung-hwan Pi, Hwaseong-si, KR;

Inventors:

Sung-Chul Lee, Osan-si, KR;

Kwang-Seok Kim, Seoul, KR;

Kee-Won Kim, Suwon-si, KR;

Young-Man Jang, Hwaseong-si, KR;

Ung-Hwan Pi, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 43/10 (2013.01);
Abstract

Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.


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