The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jul. 16, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hee-Ju Shin, Seoul, KR;
Ung-Hwan Pi, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); G11C 11/15 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.