The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 03, 2015
Applicants:
Ung-hwan Pi, Hwaseong-si, KR;
Kwang-seok Kim, Seoul, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Inventors:
Ung-hwan Pi, Hwaseong-si, KR;
Kwang-seok Kim, Seoul, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 43/08 (2013.01);
Abstract
Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.