Kanagawa-ken, Japan

Tsuyoshi Ohta

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Yokohama, JP (2009 - 2013)
  • Kanagawa-ken, JP (2011 - 2014)

Company Filing History:


Years Active: 2009-2014

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7 patents (USPTO):Explore Patents

Title: Tsuyoshi Ohta: Innovator in Semiconductor Technology

Introduction

Tsuyoshi Ohta is a prominent inventor based in Kanagawa-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of Tsuyoshi Ohta's latest patents is focused on a semiconductor device and method for manufacturing the same. According to one embodiment, the semiconductor device includes a first semiconductor layer, along with a plurality of base regions provided on the surface of this layer. The device also features a source region selectively placed on each of the surfaces of the base regions. Additionally, a gate electrode is provided via a gate insulating film in each of a pair of trenches that penetrate the base regions from the surface of the source region to the first semiconductor layer. A field plate electrode is also included, which is provided via a field plate insulating film in each of the trenches under the gate electrode, with a thickness of part of the field plate insulating film being greater than that of the gate insulating film.

Another patent describes a semiconductor device that includes a first semiconductor layer of a first conductivity type, along with a plurality of second semiconductor regions of a second conductivity type. A third semiconductor region of the second conductivity type and a first electrode are also part of this device. The second regions are separately provided on a first major surface side of the first layer, while the third region surrounds the second regions. The first electrode is positioned on the first layer and the second regions, with the first layer having a first portion and a second portion, where the second portion has a lower resistivity than the first portion.

Career Highlights

Tsuyoshi Ohta is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on innovative semiconductor solutions that enhance device performance and efficiency.

Collaborations

Some of Tsuyoshi Ohta's notable coworkers include Masatoshi Arai and Takahiro Kawano. Their collaborative efforts have contributed to the development of advanced semiconductor technologies.

Conclusion

Tsuyoshi Ohta's contributions to semiconductor technology through his patents and work at Toshiba highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices

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