The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Sep. 15, 2011
Applicants:

Tsuyoshi Ohta, Kanagawa-ken, JP;

Masatoshi Arai, Tokyo, JP;

Miwako Suzuki, Kanagawa-ken, JP;

Inventors:

Tsuyoshi Ohta, Kanagawa-ken, JP;

Masatoshi Arai, Tokyo, JP;

Miwako Suzuki, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.


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