The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 15, 2012
Tsuyoshi Ohta, Kanagawa-ken, JP;
Tatsuya Nishiwaki, Kanagawa-ken, JP;
Norio Yasuhara, Kanagawa-ken, JP;
Masatoshi Arai, Tokyo, JP;
Takahiro Kawano, Kanagawa-ken, JP;
Tsuyoshi Ohta, Kanagawa-ken, JP;
Tatsuya Nishiwaki, Kanagawa-ken, JP;
Norio Yasuhara, Kanagawa-ken, JP;
Masatoshi Arai, Tokyo, JP;
Takahiro Kawano, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.