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For the Inventor, By the Inventor

Hsinchu, Taiwan

Tsuoe-Hsiang Liao

This inventor holds 7 USPTO granted patents. Top assignees: United Microelectronics Corp., Agamem Microelectronics Inc.. Active years: 2008-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsuoe-Hsiang Liao. Retrieved from https://idiyas.com/inventor/tsuoe-hsiang-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 85.7

Average Co-Inventor Count = 1.7

ph-index = 3

Forward Citations = 22(Granted Patents)


Company Filing History:

goldMedal6 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 1 
 
Agamem Microelectronics Inc.
 patent

Years Active: 2008-2011

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7 patents (USPTO):Explore Patents
1. 7872852 - Conductive structure having capacitor (2011-01-18),
2. 7747976 - Semiconductor cell with power layout not contacting sides of its rectangular boundary and semiconductor circuit utilizing semiconductor cells (2010-06-29),
3. 7696564 - Lateral diffused metal-oxide-semiconductor field-effect transistor (2010-04-13),
4. 7656264 - High coupling factor transformer and manufacturing method thereof (2010-02-02),
5. 7646203 - Defect detection system with multilevel output capability and method thereof (2010-01-12),
6. 7468620 - Frequency generator apparatus and control circuit thereof (2008-12-23),
7. 7325214 - Method for realizing circuit layout using cell library (2008-01-29),

Title: Tsuoe-Hsiang Liao: Innovator in Semiconductor Technology

Introduction

Tsuoe-Hsiang Liao is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His innovative work has paved the way for advancements in electronic components and circuits.

Latest Patents

Among his latest patents, Liao has developed a conductive structure having a capacitor. This three-dimensional conductive structure features a first electrode and a second electrode, defining a capacitor space. Notably, a signal line is included in the capacitor space, allowing for efficient signal transfer without detouring around the capacitor structure. Another significant patent involves a semiconductor cell with a power layout that does not contact the sides of its rectangular boundary. This design enhances the integration of semiconductor circuits by reducing the height of each semiconductor cell, thus improving overall circuit efficiency.

Career Highlights

Liao has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and Agamem Microelectronics Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Some of his coworkers include Tsun-Lai Hsu and Jun-Hong Ou, who have collaborated with him on various projects, further enhancing the impact of his inventions.

Conclusion

Tsuoe-Hsiang Liao's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic components and circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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