United Microelectronics Corp.

Agamem Microelectronics Inc.

Tsuoe-Hsiang Liao

Chih-Chien Liu

Chien-Kuo Wang

Tsun-Lai Hsu

Yu-Fang Chien

Hsiang-Hung Peng

Yuan-Che Lee

Jun-Hong Ou

Yu-Ming Sun

Huo-Tieh Lu

Bing-Yao Fan

Yi-Ju Liu

Tai-Chi Kao

A three-dimensional conductive structure has a first electrode and a second electrode of a capacitor structure, and thereby defines a capacitor space. At least a signal line is further included in the capacitor space where both the first electrode and the second electrode can cross and detour round the signal line. Therefore, the signal line can go directly through the capacitor space for transferring various signals without making a detour to avoid the whole capacitor structure.

Conductive structure having capacitor

A semiconductor cell and a semiconductor circuit utilizing semiconductor cells. The semiconductor cell includes a rectangular boundary and a power layout, where the power layout does not contact any pair of opposite sides of the rectangular boundary. Additionally, the semiconductor circuit includes a plurality of semiconductor cells. Each semiconductor cell includes a rectangular boundary and a power layout, where the power layout does not contact any pair of opposite sides of the rectangular boundary. Because conventional power strips are avoided, the present invention can reduce height of each semiconductor cell, and therefore increase integration of the semiconductor circuit (i.e., the integrated circuit).

Semiconductor cell with power layout not contacting sides of its rectangular boundary and semiconductor circuit utilizing semiconductor cells

A lateral diffused metal-oxide-semiconductor field-effect transistor structure including a P substrate, an N+ buried layer, an N epitaxial layer, a P well, an N well, a drain region, a source region, and a body region is disclosed. The N+ buried layer is located between the P substrate and the N epitaxial layer, the P well contacts the N+ buried layer, the source region and the body region are located in the P well, the N well is located in the N epitaxial layer, and the drain region is located in the N well. When a high voltage is applied to the drain and the P substrate is grounded, a breakdown voltage with the P substrate is raised because of the N+ buried layer isolating the P substrate from the N epitaxial layer, so as to be able to avoid PN junction breakdown.

Lateral diffused metal-oxide-semiconductor field-effect transistor

A high coupling factor transformer and a manufacturing method thereof are provided. The transformer includes a primary winding and a secondary winding. The secondary winding is adjacent to the primary winding. The secondary winding and the primary winding induct with each other. The primary winding includes a plurality of first protruding portions, and the secondary winding includes a plurality of second protruding portions. The first protruding portions stretch to the secondary winding without electro-contact, and the second protruding portions stretch to the primary winding without electro-contact.

High coupling factor transformer and manufacturing method thereof

A defect detection system and related method take advantage of multilevel detection technique for detecting defects on an integrated circuit. The defect detection system utilizes an analog-to-digital converter for converting an analog sensing signal into an output code having a plurality of bits. The defect detection methods include an open test method and a short test method. The open and short test methods both include a calibrating method and a testing method individually. The calibrating method functions to determine a preset reference voltage for the analog-to-digital converter based on a predetermined code. The testing method makes use of the preset reference voltage and the predetermined code for generating the output code having a plurality of bits. The output code is then utilized to determine whether or not there are open or short defects on the integrated circuit and to classify the defects.

Defect detection system with multilevel output capability and method thereof

A frequency generator apparatus and a control circuit thereof are provided. The frequency generator apparatus comprises the control circuit and a frequency generator, wherein the control circuit contains an electric fuse (efuse). The control circuit outputs an enabling signal according to the state of the efuse. The frequency generator is coupled to the control circuit, receives the enabling signal, and decides to output a frequency signal or not according to the enabling signal.

Frequency generator apparatus and control circuit thereof

A method for realizing circuit layouts. Complex integrated circuit includes cells of basic functions, and layout designs for these cells can be recorded as a library. The claimed invention replaces common power strips with grid power contacts/vias in the layout of each cell. While realizing the layout of an integrated circuit, a routing procedure is used to connect power of all cells arranged in the integrated circuit. Because power strips are avoided in each cell, the claimed invention can reduce layout height of each cell, and therefore increase integration of integrated circuits.

Growing community of inventors

Hsin-Chu, Taiwan

Tsuoe-Hsiang Liao