Tsung-Hsien Huang

Title: Tsung-Hsien Huang: Innovator in Memory Device Technology

Introduction

Tsung-Hsien Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 11 patents. His innovative work focuses on enhancing the efficiency and performance of memory devices.

Latest Patents

Huang's latest patents include a groundbreaking SRAM with tracking circuitry designed to reduce active power consumption. This memory device features a first memory cell, a first tracking cell, a tracking bit line, a second tracking cell, and a word line driver. The first memory cell is configured to receive a first word line signal, while the first tracking cell emulates the first memory cell. The tracking bit line transmits a tracking bit line signal to the first tracking cell, and the second tracking cell adjusts this signal according to the first word line signal. The word line driver modifies the first word line signal based on the tracking bit line signal and the distance between the second tracking cell and a common node on the tracking bit line. Additionally, he has developed a memory device and a method for operating it, which includes a word line driver connected to a word line and a row of memory cells powered by a first supply voltage.

Career Highlights

Throughout his career, Tsung-Hsien Huang has worked with notable organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and Tsinghua University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and memory devices.

Collaborations

Huang has collaborated with esteemed colleagues such as Cheng Hung Lee and Hong-Chen Cheng. These partnerships have contributed to the advancement of his research and innovations in memory technology.

Conclusion

Tsung-Hsien Huang is a distinguished inventor whose work in memory device technology has led to significant advancements in the field. His innovative patents and collaborations reflect his commitment to enhancing the efficiency of memory devices.