Tsung-Chi Cheng

Title: Tsung-Chi Cheng: Innovator in Semiconductor Technology

Introduction

Tsung-Chi Cheng is a notable inventor based in Padeh, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device manufacturing.

Latest Patents

Cheng's latest patents include a semiconductor device and its manufacturing method. This invention discloses a method where the nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain featuring a nitrified gradient layer structure. The varying extents of nitrification within this structure provide essential protection and buffering, preventing undercutting after etching due to material differences in the multilayer structure or interface effects. Another significant patent is for a thin film transistor structure and its manufacturing method. This invention utilizes a sandwich structure to reduce the resistivity of the source/drain, thereby enhancing reliability. The sandwich structure comprises an AlNdN alloy/AlNd alloy/AlNdN alloy configuration, where the AlNdN alloy serves as a buffer layer or diffusion barrier, preventing unwanted interactions between the AlNd alloy and the amorphous silicon layer.

Career Highlights

Tsung-Chi Cheng is currently employed at Chunghwa Picture Tubes, Ltd., where he continues to develop innovative semiconductor technologies. His work has been instrumental in advancing the capabilities of thin film transistors and semiconductor devices.

Collaborations

Cheng collaborates with esteemed colleagues such as Yu-Chou Lee and Ching-Yeh Kuo, contributing to a dynamic research environment that fosters innovation.

Conclusion

Tsung-Chi Cheng's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence advancements in device manufacturing and reliability.