Chunghwa Picture Tubes, Ltd.

Tsung-Chi Cheng

Yu-Chou Lee

Wen-Kuang Tsao

Hsiang-Hsien Chung

Yea-Chung Shih

Ching-Yeh Kuo

Jui-Chung Chang

Hung-Yi Hsu

A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.

Semiconductor device and its manufacturing method

A thin film transistor source/drain structure and the manufacturing method thereof are disclosed. The thin film transistor source/drain structure uses a sandwich structure to reduce the resistivity of the source/drain and upgrade the reliability. The sandwich structure preferably comprises a structure of AlNdN alloy/AlNd alloy/AlNdN alloy. The AlNdN alloy is used as a buffer layer or a diffusion barrier to prevent the AlNd alloy and an amorphous silicon layer from diffusing into each other. The other AlNdN alloy is used as a glue layer and to protect the AlNd alloy from being over-etched. The other AlNdN alloy can also prevent the AlNd alloy and the following formed ITO from contact and interaction.

Thin film transistor structure and manufacturing method thereof

Growing community of inventors

Padeh, Taiwan

Tsung-Chi Cheng