The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Nov. 07, 2007
Ching-yeh Kuo, Padeh, TW;
Tsung-chi Cheng, Padeh, TW;
Yu-chou Lee, Padeh, TW;
Yea-chung Shih, Padeh, TW;
Wen-kuang Tsao, Padeh, TW;
Hsiang-hsien Chung, Padeh, TW;
Hung-yi Hsu, Padeh, TW;
Jui-chung Chang, Padeh, TW;
Ching-Yeh Kuo, Padeh, TW;
Tsung-Chi Cheng, Padeh, TW;
Yu-Chou Lee, Padeh, TW;
Yea-Chung Shih, Padeh, TW;
Wen-Kuang Tsao, Padeh, TW;
Hsiang-Hsien Chung, Padeh, TW;
Hung-Yi Hsu, Padeh, TW;
Jui-Chung Chang, Padeh, TW;
ChungHwa Picture Tubes, Ltd., Padeh, TW;
Abstract
A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.