Hyogo, Japan

Tsuneichiro Sano


Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Osaka, JP (2006 - 2008)
  • Hyogo, JP (2014 - 2016)
  • Toyama, JP (2017 - 2018)

Company Filing History:


Years Active: 2006-2018

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6 patents (USPTO):Explore Patents

Title: Tsuneichiro Sano: Innovator in Silicon Carbide Semiconductor Technology

Introduction

Tsuneichiro Sano is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in silicon carbide devices. With a total of 6 patents to his name, Sano's work has advanced the capabilities and applications of semiconductor devices.

Latest Patents

One of Sano's latest patents is for a silicon carbide semiconductor device. This device features a first conductivity type silicon carbide substrate that includes an active region and a termination region surrounding it. The design incorporates a plurality of unit cells located in the active region, each equipped with a transistor structure. The termination structure is composed of a silicon carbide semiconductor layer and a second conductivity type body region, along with several outer-circumferential upper source electrodes and an upper gate electrode. Additionally, the device is protected by a first and second protective film, ensuring its durability and functionality.

Another notable patent involves a semiconductor device that includes a semiconductor layer with an impurity region of a first conductivity type. This device features a gate insulating layer, a gate electrode, and an interlayer insulating layer. The innovative design includes a recess at a corner of the gate electrode, creating a cavity that enhances the device's performance.

Career Highlights

Throughout his career, Tsuneichiro Sano has worked with notable companies, including Panasonic Intellectual Property Management Co., Ltd. and Panasonic Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Sano has collaborated with esteemed colleagues such as Teruhito Ohnishi and Koichiro Yuki. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Tsuneichiro Sano's contributions to silicon carbide semiconductor technology have established him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing semiconductor technology.

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