The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jun. 12, 2006
Teruhito Ohnishi, Osaka, JP;
Koichiro Yuki, Kyoto, JP;
Tsuneichiro Sano, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Ken Idota, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Shigeki Sawada, Kyoto, JP;
Teruhito Ohnishi, Osaka, JP;
Koichiro Yuki, Kyoto, JP;
Tsuneichiro Sano, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Ken Idota, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Shigeki Sawada, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.