The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Dec. 21, 2012
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device according to the present invention includes a p-type semiconductor substrate, a first n-type collector diffusion layer formed in the p-type semiconductor substrate, a deep trench formed in the p-type semiconductor substrate so as to surround the first n-type collector diffusion layer, a p-type channel stopper layer formed beneath the deep trench, and an n-type diffusion layer formed between a sidewall of the deep trench and the first n-type collector diffusion layer.