Tsuhung Huang

Title: Tsuhung Huang: Innovator in Substrate Processing Technologies

Introduction

Tsuhung Huang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of substrate processing, holding a total of 3 patents. His innovative approaches have advanced the techniques used in semiconductor manufacturing.

Latest Patents

One of Tsuhung Huang's latest patents is an etching method that involves disposing a substrate in a chamber. This substrate includes a silicon nitride film, a silicon oxide film, silicon, and silicon germanium. The method sets a pressure in the chamber to 1,333 Pa or more and selectively etches the silicon nitride film with respect to the silicon oxide film, silicon, and silicon germanium by supplying hydrogen fluoride gas into the chamber. Another notable patent is a substrate processing method designed for effectively etching boron-doped silicon. This method exposes a wafer, which includes an SiB layer made of boron-doped silicon, to fluorine gas and ammonia gas while heating the wafer mounted on a stage.

Career Highlights

Tsuhung Huang is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His work focuses on developing advanced technologies that enhance the efficiency and effectiveness of substrate processing.

Collaborations

Throughout his career, Tsuhung Huang has collaborated with notable colleagues, including Reiko Sasahara and Satoshi Toda. These collaborations have contributed to the development of innovative solutions in the field.

Conclusion

Tsuhung Huang's contributions to substrate processing technologies have established him as a key figure in the semiconductor industry. His patents reflect his commitment to innovation and excellence in his field.