The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Mar. 28, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Reiko Sasahara, Nirasaki, JP;

Satoshi Toda, Nirasaki, JP;

Takuya Abe, Nirasaki, JP;

Tsuhung Huang, Hsin-chu, TW;

Yoshie Ozawa, Nirasaki, JP;

Ken Nakagomi, Nirasaki, JP;

Kenichi Nakahata, Nirasaki, JP;

Kenshiro Asahi, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0206 (2013.01); H01L 21/02359 (2013.01); H01L 21/31056 (2013.01);
Abstract

There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.


Find Patent Forward Citations

Loading…