The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Dec. 13, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/677 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/30604 (2013.01); H01L 21/32135 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 21/67173 (2013.01); H01L 21/67196 (2013.01); H01L 21/67742 (2013.01); H01L 21/67745 (2013.01);
Abstract
In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.