Tokyo Electron Limited

Tsuhung Huang

Reiko Sasahara

Takehiko Orii

Satoshi Toda

Jun Lin

Takuya Abe

Kenshiro Asahi

Teppei Okumura

Ken Nakagomi

Kenichi Nakahata

Yoshie Ozawa

There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Etching method

There is provided a substrate processing method which is capable of suitably etching a boron-doped silicon. According to the present invention, a wafer W including an SiB layer made of boron-doped silicon is exposed to a fluorine gas and an ammonia gas, and the wafer W mounted on a stage is heated.

Substrate processing method and method for removing boron-doped silicon

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

Etching method and substrate processing system

Growing community of inventors

Hsin-Chu, Taiwan

Tsuhung Huang