Tateyama, Japan

Toshio Wada


Average Co-Inventor Count = 1.2

ph-index = 6

Forward Citations = 97(Granted Patents)


Company Filing History:


Years Active: 1997-2001

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8 patents (USPTO):Explore Patents

Title: The Ingenious Mind of Toshio Wada: Pioneering Innovations in Semiconductor Technology

Introduction

Toshio Wada, an inventive spirit from Tateyama, Japan, has made significant contributions to the world of semiconductor technology. With a remarkable portfolio that includes eight patents, Wada's innovative approaches have paved the way for enhancements in the efficiency and functionality of semiconductor devices.

Latest Patents

Among Wada's latest inventions is a semiconductor device featuring a field-shield device isolation structure. This LSI semiconductor device is designed with a unique device isolation structure and a method for fabricating it. The device incorporates a buried-type field-shielding device formed within the non-active regions of the LSI circuit. It features a field-shield insulator film lining the interiors of trench cavities on the substrate, complemented by buried field-shield electrodes. Unlike traditional methods, this isolation structure levels with the substrate's upper surface, allowing for optimized use of the interior substrate space rather than its surface area. This innovation leads to a higher density of integration for active devices and simplifies the designs of interconnection lines, ultimately suggesting a cost-effective production pathway for large integrated circuits in the future.

Additionally, Wada's patent on a semiconductor integrated circuit device enhances storing functions at high densities, guaranteeing stable operations even at low power supply voltages. This invention features a MOS transistor with a gate electrode and an n-type impurity region serving as a source-drain. It integrates a memory capacitor comprising a dielectric film and an n-type impurity region that opposes the conductor through the dielectric film in a first trench beneath the gate electrode. This innovative design minimizes the area occupied by the MOS transistor and memory capacitor while ensuring reliable storing operations through a two-transistor memory cell configuration.

Career Highlights

Throughout his career, Toshio Wada has been associated with notable companies such as Nippon Steel Semiconductor Corporation and Nittetsu Semiconductor Co., Ltd. His work in these organizations has significantly influenced advancements in semiconductor design and fabrication.

Collaborations

Wada has collaborated with esteemed professionals in the field, including Eiichi Iwanami and Yoji Hata. These partnerships have fostered a collaborative environment that has propelled innovations within semiconductor technology.

Conclusion

Toshio Wada continues to be a significant figure in semiconductor inventions, with his recent patents promising to reshape the future landscape of integrated circuits. His groundbreaking work not only exemplifies his inventive prowess but also signifies critical advancements for the industry at large. The impact of his innovations is sure to resonate for years to come, pushing the boundaries of what is possible in semiconductor technology.

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