The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Apr. 29, 1996
Toshio Wada, Tateyama, JP;
Yoji Hata, Tateyama, JP;
Nippon Steel Semiconductor Corporation, Tateyama, JP;
Abstract
A semiconductor integrated circuit has P-channel active MOSFETs and N-channel active MOSFETs formed in a semiconductor substrate. In order to electrically isolate the active MOSFETs, the semiconductor integrated circuit has P-channel field shield MOS devices and N-channel field shield MOS devices. The P-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of the P-channel active MOSFETs. The N-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of N-channel active MOSFETs. A P-channel field shield voltage, which is higher than a power supply voltage of the semiconductor integrated circuit, is supplied to the field shield electrodes of the P-channel field shield MOS device to turn the P-channel field shield MOS devices to an OFF-state to electrically isolate the P-channel active MOSFETs. An N-channel field shield voltage, which is lower than a ground level of the semiconductor integrated circuit, is supplied to the field shield electrodes of the N-channel field shield MOS devices to turn the N-channel field shield MOS devices to an OFF-state to electrically isolate the N-channel active MOSFETs.