Tokyo, Japan

Toshikazu Shimada

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Technology. Top assignees: Hitachi, Ltd., Japan Science and Technology Agency, Agency of Industrial Science and Technology. Active years: 1981-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshikazu Shimada. Retrieved from https://idiyas.com/inventor/toshikazu-shimada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 82.6

Average Co-Inventor Count = 4.9

ph-index = 12

Forward Citations = 534(Granted Patents)


Location History:

  • Hinodemachi, JP (1981 - 1982)
  • Kokubunji, JP (1987 - 2006)
  • Tokyo, JP (1984 - 2007)

Company Filing History:


Years Active: 1981-2007

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Areas of Expertise:
Information Storage Element
Controllable Conduction Device
Solid-State Display
Semiconductor Memory Device
Radiation Detector
Solar Cell
Thin Film Solar Cell
Semiconductor Laser Device
Photo-Electronic Conversion
Electrophotographic Member
Charge Storage Barrier
Crystalline Silicon-Germanium-Carbon Alloy
23 patents (USPTO):Explore Patents

Title: Innovations of Toshikazu Shimada: Pioneering Information Storage Technologies

Introduction

Toshikazu Shimada is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of information storage technologies. With a remarkable portfolio of 23 patents, he has developed innovative solutions that push the boundaries of memory device capabilities.

Latest Patents

Among his latest patents are groundbreaking inventions such as the "Information storage element, manufacturing method thereof, and memory array." This invention describes an information memory device capable of reading and writing information through the mechanical operation of a floating gate layer. The device features a unique gate insulation film with a cavity that stabilizes two deflection states of the floating gate layer. By utilizing Coulomb interactive forces between electrons or positive holes and an external electric field, this technology enhances data writing and reading processes based on changes in the stable deflection state of the floating gate layer.

Another notable patent is the "Controllable conduction device with electrostatic barrier," which defines a transistor with a conduction path for charge carriers and a gate that controls their flow. This innovative device includes a multilayer structure that provides a multiple tunnel junction configuration, effectively blocking current leakage when the transistor is in the off state. The patent highlights various configurations of transistors, including vertical and lateral setups, underlining their application in complementary pairs and random access memory cells. Improved gate structures are also described, which can integrate with memory devices that utilize tunnel barrier configurations for charge storage.

Career Highlights

Throughout his career, Toshikazu Shimada has worked with esteemed organizations such as Hitachi, Ltd. and the Japan Science and Technology Agency. His efforts in research and development have significantly advanced the field of electronics and memory technology.

Collaborations

Shimada has collaborated with notable coworkers, including Kazuo Nakazato and Kiyoo Itoh. Together, they have contributed to several patented innovations that further enhance technology in information storage and memory devices.

Conclusion

With a rich history of innovations and numerous patents, Toshikazu Shimada stands out as a key figure in the realm of information storage technologies. His inventive spirit and collaboration with industry peers continue to drive advancements that shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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