Miyagi, Japan

Toshikazu Mizukoshi

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Oki Electric Industry Co., Ltd., Oki Semiconductor Co., Ltd.. Active years: 2002-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshikazu Mizukoshi. Retrieved from https://idiyas.com/inventor/toshikazu-mizukoshi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 1.2

ph-index = 3

Forward Citations = 24(Granted Patents)


Location History:

  • Tokyo, JP (2002)
  • Miyagi, JP (2008 - 2012)

Company Filing History:


Years Active: 2002-2012

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3 patents (USPTO):Explore Patents

Title: Toshikazu Mizukoshi - Innovator in Semiconductor Technology.

Introduction

Toshikazu Mizukoshi is an inventor based in Kyoto-shi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative ideas focus on improving semiconductor devices and their manufacturing processes.

Latest Patent Applications

Mizukoshi's notable patent application is titled "SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME." This application describes a contact plug that is electrically connected to an impurity diffusion region between the sidewalls of adjacent memory cells. The design includes a sealing film that is denser than the interlayer dielectric film, enhancing the reliability of the semiconductor device. The contact plug features a barrier metal film that covers the surface of the sealing film and the bottom surface portion of the contact hole, with a metal plug embedded in the contact hole, surrounded by the barrier metal film.

Conclusion

Toshikazu Mizukoshi's work in semiconductor technology showcases his innovative approach to enhancing device manufacturing processes. His contributions are poised to impact the future of semiconductor applications significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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