The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8154070 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 10, 2012

Filed:

Dec. 05, 2007
Applicant:

Toshikazu Mizukoshi, Miyagi, JP;

Inventor:

Toshikazu Mizukoshi, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory includes a semiconductor substrate having a body member and a step member formed on the body member, a highly doped first well layer formed on the step member, a control electrode formed on the step member, a first and a second diffusion layers in the substrate, lightly doped second well layers formed on the main surface of the substrate between the first or the second diffusion layer and the first well layer, and a first and a second charge-storage multi-layers sandwiching the step member and the control electrode, each of the first and the second charge-storage multi-layers including a bottom oxide layer, a charge-storage film, a top oxide layer and a floating electrode which are formed in that order.


Find Patent Forward Citations

Mizukoshi, Toshikazu. (2012). Semiconductor memory device and method of manufacturing the same (U.S. Patent No. 8154070). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8154070

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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